Interfacial Reaction Between Tin and Copper Oxide Investigated by X-Ray Photoelectron Spectroscopy

Document Type


Degree Name

Master of Science (MS)


Physics and Astronomy

Date of Award

Summer 2022


Preliminary investigation performed on Sn/CuO interface exhibit chemical interaction at the interface. A 9 Å thick film of tin was deposited on a CuO substrate kept at room temperature. The interface was characterized in situ by the technique of x-ray photoelectron spectroscopy (XPS). The shape and the binding energy of the core levels of Sn and Cu were recorded and analyzed. It was observed that the tin got oxidized to form SnO2. This was followed by the reduction of copper oxide to elemental copper. The study was extended to investigate the Sn/CuO for various thicknesses of the Sn overlayer. The electron-beam technique has been used for the deposition of the films. Copper was oxidized in a quartz tube furnace to form CuO. The CuO substrate was loaded in the processing chamber for the investigation. Various thicknesses of thin films of tin were deposited on such a substrate kept at room temperature. The Sn/CuO was characterized in situ. The spectral data showed a gradual reduction of copper oxide to elemental copper as the tin overlayer thickness was increased. The tin was oxidized to SnO2. The interface consisted of SnO2 and elemental Cu. Unreacted Sn was observed for thicknesses beyond 0.6 nm of the tin overlayer. The presence of unreacted Sn was utilized to obtain th interface width. For room temperature deposition of Sn over CuO, the interface width was found to be 0.68 ± 0.2 nm.


Anil Chourasia

Subject Categories

Physical Sciences and Mathematics | Physics